page . 1 stad-jun.11.2007 PJP6000 features ? r ds(on) , v gs @10v,i ds @30a=14m ? advanced trench process technology high density cell design for ultra low on-resistance specially designed for converters and power motor controls fully characterized avala nche voltage and current in compliance with eu rohs 2002/95/ec directives mechanical data case: to-220ab molded plastic terminals : solderable per mil-std-750,method 2026 marking : p6000 60v n-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) note: 1. maximum dc current limited by the package pan jit reserves the right to improve product design,functions and reliability without notice gate drain source r e t e m a r a pl o b m y st i m i ls t i n u e g a t l o v e c r u o s - n i a r dv s d 0 6v e g a t l o v e c r u o s - e t a gv s g + 0 2v t n e r r u c n i a r d s u o u n i t n o ci d 0 6a t n e r r u c n i a r d d e s l u p ) 1 i m d 0 1 2a n o i t a p i s s i d r e w o p m u m i x a m t a 5 2 = o c t a 5 7 = o c p d 0 9 5 . 3 5 w e g n a r e r u t a r e p m e t e g a r o t s d n a n o i t c n u j g n i t a r e p o t j t , g t s 0 5 1 + o t 5 5 - o c e s l u p e l g n i s h t i w y g r e n e e h c n a l a v a i s a h m 3 . 0 = l , v 0 3 = d d v , a 7 3 = e s a 0 1 4j m e c n a t s i s e r l a m r e h t e s a c - o t - n o i t c n u jr c j 4 . 1 o w / c ) d e t n u o m b c p ( e c n a t s i s e r l a m r e h t t n e i b m a o t - n o i t c n u j 2 r a j 2 6 o w / c
page . 2 stad-jun.11.2007 PJP6000 electrical characteristics ( t a =25 o c unless otherwise noted ) v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u c i t a t s e g a t l o v n w o d k a e r b e c r u o s - n i a r d v b s s d v s g i , v 0 = d a u 0 5 2 =0 6-- v e g a t l o v d l o h s e r h t e t a g v ) h t ( s g v s d v = s g i , d a u 0 5 2 =1-3 v e t a t s - n o e c r u o s - n i a r d e c n a t s i s e r r ) n o ( s d v s g i , v 0 1 = d a 0 3 =-2 14 1 m ? v s g i , v 0 1 = d 5 2 1 = c t , a 0 3 = o c--6 2 n i a r d e g a t l o v e t a g o r e z t n e r r u c i s s d v s d v , v 0 6 = s g v 0 = --1 a u v s d v , v 0 6 = s g 5 2 1 = c t , v 0 = o c--0 1 e g a k a e l y d o b e t a g i s s g v s g =+ v , v 0 2 s d v 0 =--+ 0 0 1 a n e c n a t c u d n o c s n a r t d r a w r o f g s f v s d i > ) n o ( d r x x a m ) n o ( s d i , d a 5 1 =5 2-- s c i m a n y d e g r a h c e t a g l a t o t q g v s d i , v 0 3 = d a 0 3 = v s g v 0 1 = -0 4- c n e g r a h c e c r u o s - e t a g q s g -8 . 3- e g r a h c n i a r d - e t a g q d g -2 1- e m i t y a l e d n o - n r u t t ) n o ( d v d d r , v 0 3 = l 5 1 = ? i d v , a 2 = n e g v 0 1 = r g 5 . 2 = ? -6 . 4 10 2 s n e m i t e s i r n o - n r u t t r -2 . 4 18 1 e m i t y a l e d f f o - n r u t t ) f f o ( d -0 40 6 e m i t l l a f f f o - n r u t t f -3 . 75 . 9 e c n a t i c a p a c t u p n i c s s i v s d v , v 5 2 = s g v 0 = h m 0 . 1 = f z -0 8 4 1- f p e c n a t i c a p a c t u p t u o c s s o -0 9 1- e c n a t i c a p a c r e f s n a r t e s r e v e r c s s r -5 3 1- e d o i d n i a r d - e c r u o s t n e r r u c d r a w r o f e d o i d . x a m i s ---0 6 a e g a t l o v d r a w r o f e d o i d v d s i s v , a 0 3 = s g v 0 =-4 9 . 02 . 1 v
page . 3 stad-jun.11.2007 PJP6000 fig. 1-typical forward characteristic fig.1- output characteristic typical characteristics curves (t =25 c,unless otherwise noted) a o fig.2- transfer characteristic fig.3- on resistance vs drain current fig.6 - capacitance fig.5- on resistance vs junction temperature t =-55 c j o fig.4- on resistance vs gate to source voltage t =25 c j o v =10v ds v =10v ds v =10v ds v =10v i =30a gs d v =0v f=1mhz gs 0 20 40 60 80 100 03691215 v ds - drain-to-source voltage (v) i d - drain-to-source current (a) 4.0v 4.5v 5.0v 6.0v~10 0 20 40 60 80 100 22.533.544.555.56 v gs - gate-to-source voltage (v) i d - drain source current (a) v ds =10v t j = 125 o c 25 o c -55 o c 0 5 10 15 20 25 30 0 20406080100 i d - drain current (a) v gs = 10v r - on-resistance (m ) ds(on) 0 10 20 30 40 50 246810 v gs - gate-to-source voltage (v) i d =30a t j =25 o c 125 o c r - on-resistance (m ) ds(on) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) vgs =10 v id =30a 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 v ds - drain-to-source voltage (v) c - capacitance (pf) ciss coss crss f=1mhz v gs =0v
page . 4 stad-jun.11.2007 PJP6000 fig.11 - maximum drain current vs junction temperature fig.8 - threshold voltage vs junction temperature fig.7 - gate charge fig.9 - breakdown voltage vs junction temperature fig.10 - source-drain diode forward voltage v =30v i =30a ds d t =125 c j o t =25 c j o t =-55 c j o v =0v gs fig.12 - safe operation area 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g - gate charge (nc) v gs - gate-to-source voltage (v) v ds =30 v i d =30a 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - source-to-drain voltage (v) i s - source current (a) v gs =0v 25 o c -55 o c t j = 125 o c 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v th - g-s threshold voltage (normalized) i =250ua d 0.9 0.95 1 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) bv dss - breakdown voltage (normalized) i =250ua d 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 t j - junction temperature ( o c) i d - drain current (a) 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds - drain-to-source voltage (v) i d -draincurrent(a) 10ms 100us 1ms dc rds(on) limited
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